GEM new energy hot US stock market hot LED



Under the idea of ​​creating a low-carbon economy that is energy-saving and environmentally friendly, China is making a big semiconductor lighting industry cake. Liu Shiping, director of the Semiconductor Lighting Technology and Application Committee of the China Illumination Society, said that "the introduction of opinions will drive the rapid development of domestic LED lighting, drive and testing equipment industries." According to relevant agencies, in 2010, China's LED industry output value will exceed 1500. 100 million yuan; doubled the total output value in 2008, with a total output value of about 70 billion yuan in 2008.

The current situation of the semiconductor lighting industry is very good, Liu Shiping pointed out that "the opinions will promote the extension of China's semiconductor lighting enterprises to the upstream of the industrial chain, which is conducive to Chinese enterprises to win in the future competition." China is the world's largest producer of lighting sources and lamps. But the main production of low-end products, accounting for about 18% of the global market share. In the industrial chain, LED epitaxial wafers and LED wafers account for about 70% of the industry's profits, LED applications account for about 10%-20%; LED packaging is less than 10%.

Huatai Securities Research Institute has a lot of room for development. Sun Hua, an electronic components analyst, is more concerned about related companies. "Development Opinions" proposes to support leading enterprises. In the future, some leading companies in the industry will benefit, such as Sanan Optoelectronics, which produces LED epitaxy and chips. In addition, it has the ability or Companies involved in the production of core technology and equipment will also benefit, such as Tsinghua Tongfang."

At a time when China's semiconductor lighting industry is prosperous, the US securities market has already embraced the industry. US Nasdaq-listed Cree shares rose 5.36% on the 9th, closing at $39.09, the highest closing price since December 31, 2004. For Cree, which produces LED upstream chips, US analyst Christopher Brandsett is quite optimistic, setting the target price at $45 for two reasons, namely, strong demand for LCD panel backlights and general lighting applications; Cree is the first to use 4-inch wafers, etc. Process technology will lead to an increase in gross profit margin.


The Co-Al Co-doped Barium Titanate Lead-free Piezoelectric Ceramics was successfully developed by Yuhai company through repeated experiments. By Researching the influence of Co-Al Co-doping on the structure and properties of Barium Titanate-based piezoelectric ceramics, the formulation and preparation technology of Barium Titanate-based piezoelectric ceramics were optimized. Yuhai`s BaTiO3 was prepared by conventional solid-phase sintering method, with the piezoelectric constant d33 (>170pC/N), dielectric loss tgδ≤0.5% and mechanical coupling coefficient  Kp≥0.34.

Barium titanate lead-free piezoelectric ceramics are important basic materials for the development of modern science and technology, which was widely used in the manufacture of ultrasonic transducers, underwater acoustic transducers, electroacoustic transducers, ceramic filters, ceramic transformers, ceramic frequency discriminators, high voltage generators, infrared detectors, surface acoustic wave devices, electro-optic devices, ignition and detonation devices, and piezoelectric gyroscope and so on.

Application:  military, ocean, fishery, scientific research, mine detection, daily life and other fields.

 

China Patent of Yuhai company`s BaTiO3

Chinese Patent No.: ZL 2011 1 0126758.6   

Name: Lead-free Barium Titanate Piezoelectric Material with Addition of Cobalt and Aluminum 

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Lead free piezo material BaTiO3

Lead-free Material

Properties

 

 

BaTiO3

Dielectric Constant

ɛTr3

 

1260

Coupling factor

KP

 

0.34

 

K31

 

0.196

 

K33

 

0.43

 

Kt

 

0.32

Piezoelectric coefficient

d31

10-12m/v

-60

 

d33

10-12m/v

160

 

g31

10-3vm/n

-5.4

 

g33

10-3vm/n

14.3

Frequency coefficients

Np

 

3180

 

N1

 

2280

 

N3

 

 

 

Nt

 

2675

Elastic compliance coefficient

Se11

10-12m2/n

8.4

Machanical quality factor

Qm

 

1200

Dielectric loss factor

Tg δ

%

0.5

Density

ρ

g/cm3

5.6

Curie Temperature

Tc

°C

115

Young's modulus

YE11

<109N/m3

119

Poison Ratio

 

 

0.33

 


Lead Free Piezoelectric Elements

Piezo Element,Piezo Ceramic Elements,Piezoelectric Ceramic,Pzt Tubes

Zibo Yuhai Electronic Ceramic Co., Ltd. , http://www.yhpiezo.com

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