As global demand for satellite communications, satellite television, satellite weather forecasting and satellite geodata continues to increase, STMicroelectronics (ST), the world's leading semiconductor supplier, spans multiple electronic applications, launching the first fully compliant satellite Power series products for quality requirements of electronic subsystems for launch vehicles and rocket launchers.
According to the report of the Satellite Industry Association, the global satellite market is growing steadily, with annual revenues reaching more than 160 billion U.S. dollars. Although the core electronic components are produced in different parts of the world, including Europe and Asia, the devices that are certified for aerospace applications are mainly from the United States. The new radiation-resistant power MOSFET series developed by STMicroelectronics in collaboration with the European Space Agency (ESA) and the French Space Research Center (CNES) is fully compliant with the European Space Component Coordinating Committee (ESCC) technical standards.
STMicroelectronics not only expanded the supply of global aerospace quality components, but also succeeded in breaking possible delays in project duration or prohibiting the use of certain devices and entering certain market procurement restrictions. Ian Wilson, general manager of ST's Power Transistor Products Division, said: "This new radiation protection power MOSFET series product is designed according to aerospace technology requirements and is the first space-level component manufactured by European semiconductor manufacturers."
The new rad-hard power MOSFET family is rated at 6A to 80A and consists of 5 N-channel and P-channel products, including STIR100N10, STRH8N10, and STRH40P10 rated at 100V; STRH100N6 and STRH40N6.100V rated at 60V The P-channel device has a rated current of 34A. The low gate charge is a feature of ST's STripFET process that improves transistor switching performance and is ideal for DC power modules such as motor controllers and linear regulators, line switches, and electronic current limiting fuses.
The main features of ST's aerospace grade power MOSFET transistors:
• Fast switching performance • 100% avalanche test • Sealed package • Can withstand 70/100 krad total ion emission (TID)
• The anti-SEE radiation STRHxxxN10, STRHxxxN6, and STH40P10 series are available now, meeting EM (engineering model) or ESCC aerospace quality standards, packaged in TO254-AA and TO-39 through-hole packages. In addition, STMicroelectronics also offers SMD. 5 mount version of radiation resistant transistor. The STRH100N10 meets the technical standards of the ESCC 5205/021. Other products are expected to reach the ESCC related standards in the second half of 2011.
About aerospace-grade semiconductors:
Radiation resistance is the main requirement for aerospace components. There are numerous sources of radiation in space, such as the Van Allen radiation belt, solar wind and solar flares, and Galactic cosmic rays.
When subjected to radiation from gamma rays and heavy ions, radiation or radiation resistant components can work long hours in such environments. The radiation resistance method of MOSFET transistors is to optimize product design and manufacturing process, improve radiation resistance, minimize the drift or deviation of important parameters due to radiation, such as threshold voltage, leakage current, and dynamic characteristics. Anti-radiation components shall be subjected to anti-radiation tests such as Co60 gamma ray and heavy ion radiation. These tests are anti-radiation tests specified in the technical specifications of ESCC22900 and ESCC25100. All devices must pass these tests in order to obtain ESCC quality certification.
According to the report of the Satellite Industry Association, the global satellite market is growing steadily, with annual revenues reaching more than 160 billion U.S. dollars. Although the core electronic components are produced in different parts of the world, including Europe and Asia, the devices that are certified for aerospace applications are mainly from the United States. The new radiation-resistant power MOSFET series developed by STMicroelectronics in collaboration with the European Space Agency (ESA) and the French Space Research Center (CNES) is fully compliant with the European Space Component Coordinating Committee (ESCC) technical standards.
STMicroelectronics not only expanded the supply of global aerospace quality components, but also succeeded in breaking possible delays in project duration or prohibiting the use of certain devices and entering certain market procurement restrictions. Ian Wilson, general manager of ST's Power Transistor Products Division, said: "This new radiation protection power MOSFET series product is designed according to aerospace technology requirements and is the first space-level component manufactured by European semiconductor manufacturers."
The new rad-hard power MOSFET family is rated at 6A to 80A and consists of 5 N-channel and P-channel products, including STIR100N10, STRH8N10, and STRH40P10 rated at 100V; STRH100N6 and STRH40N6.100V rated at 60V The P-channel device has a rated current of 34A. The low gate charge is a feature of ST's STripFET process that improves transistor switching performance and is ideal for DC power modules such as motor controllers and linear regulators, line switches, and electronic current limiting fuses.
The main features of ST's aerospace grade power MOSFET transistors:
• Fast switching performance • 100% avalanche test • Sealed package • Can withstand 70/100 krad total ion emission (TID)
• The anti-SEE radiation STRHxxxN10, STRHxxxN6, and STH40P10 series are available now, meeting EM (engineering model) or ESCC aerospace quality standards, packaged in TO254-AA and TO-39 through-hole packages. In addition, STMicroelectronics also offers SMD. 5 mount version of radiation resistant transistor. The STRH100N10 meets the technical standards of the ESCC 5205/021. Other products are expected to reach the ESCC related standards in the second half of 2011.
About aerospace-grade semiconductors:
Radiation resistance is the main requirement for aerospace components. There are numerous sources of radiation in space, such as the Van Allen radiation belt, solar wind and solar flares, and Galactic cosmic rays.
When subjected to radiation from gamma rays and heavy ions, radiation or radiation resistant components can work long hours in such environments. The radiation resistance method of MOSFET transistors is to optimize product design and manufacturing process, improve radiation resistance, minimize the drift or deviation of important parameters due to radiation, such as threshold voltage, leakage current, and dynamic characteristics. Anti-radiation components shall be subjected to anti-radiation tests such as Co60 gamma ray and heavy ion radiation. These tests are anti-radiation tests specified in the technical specifications of ESCC22900 and ESCC25100. All devices must pass these tests in order to obtain ESCC quality certification.
Kaflon Measuring And Controlling Instruments Co., Ltd. , http://www.interwell-pen.com